GUMMEL POON MODEL PDF

This manual describes the modeling of a bipolar transistor using the Gummel- Poon model as implemented in the simulator SPICE. It should be mentioned that . Fig.2b shows the large signal schematic of the Gummel-Poon model. It represents the physical transistor: a current-controlled output current. Various parameters in the Gummel–Poon model of a bipolar junction transistor are expressed in terms of the basic structure of a transistor. A consistent.

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Since the most important operation of the bipolar transistor is the forward operation, this will be optimized after the jodel parameters. The procedures are arranged in the most logical sequence to allow earlier measured data or extracted parameters to be used as a basis for later measurements or extractions.

If necessary the entire sequence can be run multiple times in order to achieve a good fit to the measured data.

In the third section, both of the reverse datasets are included and all of the parameters again optimized to achieve the moeel fit to all of the reverse data together. It may be necessary to repeat the sequence several times to achieve the best model fit to your data.

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The Agilent A high-frequency BJT model is a three-terminal version of the Gummel-Poon model, with a measurement and extraction methodology that has been developed specifically for high-frequency devices. Gummel-Poon Bipolar Model Extraction. The measured values are later used in the extraction process to isolate individual parameters. They take you step-by-step through a BJT measurement and parameter extraction.

This chapter provides example procedures to enable you to use moddl software as a tool to measure your devices and extract their model parameter values. In the BJT model, the parameters are very interdependent because of the inherent coupling of the model equations.

The high-frequency BJT model provides improved accuracy for modeling the AC parameters of a high-frequency device, by using a network analyzer to measure the device S-parameters.

The purpose of the different measurement setups is to decouple the SPICE equations as much as possible. In this way, goodness of fit to the reverse characteristics can be sacrificed in order to achieve a good model in forward operation. The sequence also requires the least gumkel of configuration changes. OK, don’t show me this again.

Gummel–Poon model – Wikipedia

However, it is especially true of the bipolar Gummel-Poon model that certain values of poln reverse characteristic parameters will affect the modeling of the forward operation and vice versa. The optimization sequence, which fully automates the extraction of this Gummel-Poon bipolar model example, has six sections. The procedures use a series of different setups to measure current or voltage versus bias under different bias conditions.

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If you have a support question, please click here. To extract the model, typical forward and reverse operation DC characteristics and reverse bias capacitance characteristics of each junction are required.

Gummel–Poon model

The objective of each section is to isolate a device characteristic and then to optimize only those model parameters which account for this device behaviour. This example describes how to extract a standard Gummel-Poon model for a bipolar transistor.

Additionally, because accurate capacitance measurements are extremely difficult at high frequencies, the software computes the model junction capacitances from the measured S-parameter data, pokn than using a CV meter.